Influence of tellurium impurity on the Properties of Ga1−X InXAsYSb1−Y (X>0.22) solid solutions-Reference-Cited by-同舟云学术

Influence of tellurium impurity on the Properties of Ga1−X InXAsYSb1−Y (X>0.22) solid solutions

Published:2002-08 Issue:8 Volume:36 Page:855-862
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Voronina T. I.,Lagunova T. S.,Kunitsyna E. V.,Parkhomenko Ya. A.,Sipovskaya M. A.,Yakovlev Yu. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1500460.pdf

Reference9 articles.

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2. T. I. Voronina, B. E. Dzhurtanov, T. S. Lagunova, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. (Leningrad) 25, 283 (1991) [Sov. Phys. Semicond. 25, 171 (1991)].

3. A. N. Baranov, T. I. Voronina, A. N. Dakhno, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 24, 1072 (1990) [Sov. Phys. Semicond. 24, 676 (1990)].

4. A. N. Baranov, T. I. Voronina, T. S. Lagunova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 23, 780 (1989) [Sov. Phys. Semicond. 23, 490 (1989)].

5. B. I. Shklovskii and A. L. Éfros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer-Verlag, New York, 1984).

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