Light-emitting diodes based on Ga1−x InxAsySb1−y solid solutions grown from lead-containing melts-Reference-Cited by-同舟云学术

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Light-emitting diodes based on Ga1−x InxAsySb1−y solid solutions grown from lead-containing melts

Published:2004-07 Issue:7 Volume:30 Page:529-531
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Parkhomenko Ya. A.,Astakhova A. P.,Grebenshchikova E. A.,Ivanov É. V.,Kunitsyna E. V.,Yakovlev Yu. P.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1783391.pdf

Reference6 articles.

1. A. N. Baranov, T. I. Voronina, T. S. Lagunova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 23, 780 (1989) [Sov. Phys. Semicond. 23, 490 (1989)].

2. A. M. Grebenyuk, A. M. Litvak, N. A. Charykov, et al., Zh. Neorg. Khim. 35, 2941 (1990).

3. T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 941 (2001) [Semiconductors 35, 904 (2001)].

4. T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 917 (2002) [Semiconductors 36, 855 (2002)].

5. A. M. Litvak and A. N. Charykov, Zh. Fiz. Khim. 64, 2331 (1990).

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