Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range-Reference-Cited by-同舟云学术

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Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range

Published:2023-03 Issue:3 Volume:68 Page:316-324
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Boltar K. O.,Iakovleva N. I.,Lopukhin A. A.,Vlasov P. V.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S106422692303004X.pdf

Reference11 articles.

1. G. Gershon, E. Avnon, M. Brumer, W. Freiman, Y. Karni, T. Niderman, O. Ofer, T. Rosenstock, D. Seref, N. Shiloah, L. Shkedy, R. Tessler, and I. Shtrichman, Proc. SPIE 10177, 101771I (2017).

2. M. Razeghi, Eur. Phys. J. AP, No. 23, 149 (2003).

3. A. K. Bakarov, A. K. Gutakovskii, K. S. Zhuravlev, A. P. Kovchavtsev, A. I. Toropov, I. D. Burlakov, K. O. Boltar’, P. V. Vlasov, and A. A. Lopukhin, Tech. Phys. 62, 915 (2017).

4. Adachi Sadao, Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors (John Wiley & Sons, USA, 2009).

5. Philip Klipstein, Opt. Eng. 50, 061002 (2011).

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