MBE-grown InSb photodetector arrays

Author:

Bakarov A. K.,Gutakovskii A. K.,Zhuravlev K. S.,Kovchavtsev A. P.,Toropov A. I.,Burlakov I. D.,Boltar’ K. O.,Vlasov P. V.,Lopukhin A. A.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Temperature Dependence of Current in a InAsSb-Based p–n Photodiode;Journal of Communications Technology and Electronics;2023-12

2. High‐Performance N‐MoSe2/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection;Advanced Optical Materials;2023-11-28

3. Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range;Journal of Communications Technology and Electronics;2023-03

4. Modern Photodetector IR-Modules;Journal of Communications Technology and Electronics;2022-09

5. Alumina and Silicone Oxide Dielectric Films for Focal Plane Arrays Based on InSb;Journal of Communications Technology and Electronics;2022-09

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