Electromagnetic-pulse functional damage of semiconductor devices modeled using temperature gradients as boundary conditions-Reference-Cited by-同舟云学术

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Electromagnetic-pulse functional damage of semiconductor devices modeled using temperature gradients as boundary conditions

Published:2006-02 Issue:2 Volume:51 Page:231-239
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Dobykin V. D.,Kharchenko V. V.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106422690602015X.pdf

Reference9 articles.

1. E. P. Velikhov, Vestn. Ros. Akad. Nauk 73, 395 (2003).

2. B. E. Borisenko, Nanoelectronics as Ground Basis for Informational Systems of the 21st Century (Izd. Belorussk. Univ., Minsk, 1997) [in Russian].

3. Electromagnetic Terrorism at the Boundary of Millenniums, Ed. by T. R. Gazizov (Izd. Tomsk. Univ., Tomsk, 2002) [in Russian].

4. V. D. Dobykin, Radiotekh. Elektron. (Moscow) 45, 367 (2000) [J. Commun. Technol. Electron. 45, 339 (2000)].

5. V. D. Dobykin, Radiotekh. Elektron. (Moscow) 49, 365 (2004) [J. Commun. Technol. Electron. 49, 338 (2004)].

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