The Effect of Irradiation with Si+ Ions on Resistive Switching in Memristive Structures Based on Yttria-Stabilized Zirconia-Reference-Cited by-同舟云学术

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The Effect of Irradiation with Si+ Ions on Resistive Switching in Memristive Structures Based on Yttria-Stabilized Zirconia

Published:2019-07 Issue:7 Volume:45 Page:690-693
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Okulich E. V.,Koryazhkina M. N.,Korolev D. S.,Belov A. I.,Shenina M. E.,Mikhaylov A. N.,Tetelbaum D. I.,Antonov I. N.,Dudin Yu. A.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785019070253.pdf

Reference18 articles.

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2. Yu. Matveyev, K. Egorov, A. Markeev, and A. Zenkevich, J. Appl. Phys. 117, 044901 (2015). https://doi.org/10.1063/1.4905792

3. A. Mehonic, A. L. Shluger, D. Gao, I. Valov, E. Miranda, D. Ielmini, A. Bricalli, E. Ambrosi, C. Li, J. J. Yang, Q. Xia, and A. J. Kenyon, Adv. Mater. 30, 1801187 (2018). https://doi.org/10.1002/adma.201801187

4. W. Yi, S. E. Savel’ev, G. Medeiros-Ribeiro, F. Miao, M. X. Zhang, J. J. Yang, A. M. Bratkovsky, and R. S. Williams, Nat. Commun. 7, 11142 (2016). https://doi.org/10.1038/ncomms11142

5. P. Parreira, G. W. Paterson, S. McVitie, and D. A. MacLaren, J. Phys. D: Appl. Phys. 49, 095111 (2016). https://doi.org/10.1088/0022-3727/49/9/095111

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resistive Switching of Memristors Based on Stabilized Zirconia by Complex Signals;Physics of the Solid State;2020-04

2. Memristors Based on Poly(p-xylylene) with Embedded Silver Nanoparticles;Technical Physics Letters;2020-01

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