Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band-Reference-Cited by-同舟云学术

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Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band

Published:1997-02 Issue:2 Volume:84 Page:309-316
ISSN:1063-7761
Container-title:Journal of Experimental and Theoretical Physics
language:en
Short-container-title:J. Exp. Theor. Phys.

Author:

Daunov M. I.,Kamilov I. K.,Magomedov A. B.

Publisher

Pleiades Publishing Ltd

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1134/1.558118.pdf

Reference19 articles.

1. B. I. Shklovskii and A. L. Éfros, Zh. Éksp. Teor. Fiz. 62, 1156 (1972) [Sov. Phys. JETP 35, 610 (1972)].

2. A. R. Gadzhiev, S. M. Ryvkin, and I. S. Shlimak, JETP Lett. 15, 428 (1972).

3. S. M. Ryvkin and I. S. Shlimak, Phys. Status Solidi A 16, 515 (1973).

4. I. K. Kamilov, M. I. Daunov, V. A. Elizarov, and A. B. Magomedov, Zh. Éksp. Teor. Fiz. 104, 2436 (1993) [JETP 77, 92 (1993)].

5. I. K. Kamilov, M. I. Daunov, V. A. Elizarov, and A. B. Magomedov, JETP Lett. 54, 594 (1991).

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