Using hydrostatic pressure for evaluating the effect of a fluctuating potential on the energy spectrum of charge carriers in crystalline semiconductors-Reference-Cited by-同舟云学术

Using hydrostatic pressure for evaluating the effect of a fluctuating potential on the energy spectrum of charge carriers in crystalline semiconductors

Published:2008-03 Issue:3 Volume:53 Page:115-117
ISSN:1028-3358
Container-title:Doklady Physics
language:en
Short-container-title:Dokl. Phys.

Author:

Kamilov I. K.,Daunov M. I.,Gabibov S. F.

Publisher

Pleiades Publishing Ltd

Subject

General Physics and Astronomy,Mechanics of Materials,Computational Mechanics

Link

http://link.springer.com/content/pdf/10.1134/S1028335808030014.pdf

Reference15 articles.

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3. M. I. Daunov, A. B. Magomedov, and V. I. Danilov, Sov. Phys. Semicond. 26, 260 (1992) [Fiz. Tekh. Poluprovodn. 26, 467 (1992)].

4. W. Paul, J. Appl. Phys. 32, 2082 (1961).

5. M. I. Daunov, I. K. Kamilov and S. F. Gabibov, Fiz. Tverd. Tela 46, 1766 (2004).

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