Structure and electrical conductivity of polycrystalline silicon films grown by molecularbeam deposition accompanied by low-energy ion bombardment of the growth surface-Reference-Cited by-同舟云学术

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Structure and electrical conductivity of polycrystalline silicon films grown by molecularbeam deposition accompanied by low-energy ion bombardment of the growth surface

Published:1997-03 Issue:3 Volume:31 Page:237-240
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Pavlov D. A.,Khokhlov A. F.,Shungurov D. V.,Shengurov V. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187274.pdf

Reference13 articles.

1. F. L. Édel’man, The Structure of LSI Components (Nauka, Novosibirsk, 1980).

2. V. M. Koleshko and A. A. Kovalevskii, Polycrystalline Semiconductor Films in Microelectronics (Nauka, Minsk, 1978).

3. D. A. Pavlov, V. G. Shengurov, D. V. Shengurov, and A. F. Khokhlov, Fiz. Tekh. Poluprovodn. 29, 286 (1995) [Semiconductors 29, 142 (1995)].

4. P. V. Pavlov, V. N. Shabanov, V. G. Shengurov, and A.V. Kozhukhov, Poverkhnost’ No. 11, 153 (1990).

5. V. G. Shengurov and V. N. Shabanov, Poverkhnost’ No. 12, 98 (1993).

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1. Erratum: Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface [Semiconductors 31, 237–240 (March 1997)];Semiconductors;1997-10

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