Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation-Reference-Cited by-同舟云学术

Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation

Published:1997-03 Issue:3 Volume:31 Page:279-282
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Myasnikov A. M.,Obodnikov V. I.,Seryapin V. G.,Tishkovskii E. G.,Fomin B. I.,Cherepov E. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187127.pdf

Reference9 articles.

1. A. M. Myasnikov, V. I. Obodnikov, V. G. Seryapin, E. G. Tishkovskii, B. I. Fomin, and E. I. Cherepov, Pis’ma Zh. Éksp. Teor. 60, 96 (1994) [JETP Lett. 60, 102 (1994)].

2. H. Ryssel and I. Ruge, Ionenimplantation [in German] (Teubner, Stuttgart, 1978).

3. G. D. Watkins, Radiation Damage in Semiconductors (Dunod, Paris, 1964), p. 97.

4. Conference Series;G. Watkins,1975

5. L. I. Fedina and A. L. Aseev, Fiz. Tverd. Tela 32, 60 (1990) [Sov. Phys. Solid State 32, 33 (1990)].

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Voids' layer structures in silicon irradiated with high doses of high-energy helium ions;Semiconductor Physics Quantum Electronics and Optoelectronics;2015-09-30

2. Boron non-uniform precipitation in Si at the Ostwald ripening stage;Physica B: Condensed Matter;2009-12

3. Kinetics of production of oxygen-containing quenched-in donors in silicon and their nonuniform distribution: An analytical solution;Semiconductors;2001-01

4. Redistribution of phosphorus implanted into silicon doped heavily with boron;Semiconductors;2000-06

5. Formation of Se2 quasimolecules in selenium-doped silicon;Semiconductors;1998-11