Boron non-uniform precipitation in Si at the Ostwald ripening stage
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. T. Steiner (Ed.), Semiconductor Nanostructures for Optoelectronic Applications, Artech House, Boston-London, 2004, pp. 34–36, 45–183.
2. Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation
3. Special features of spatial redistribution of selenium atoms implanted in silicon
4. Influence of amorphization–recrystallization processes on distribution of selenium and oxygen atoms implanted in silicon
5. Ostwald ripening during ion beam synthesis — a computer simulation for inhomogeneous systems
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1. Atomic structure of extended defects in boron-implanted silicon layers;Optoelectronics, Instrumentation and Data Processing;2014-05
2. Constructed Wetlands as Green Tools for Management of Boron Mine Wastewater;International Journal of Phytoremediation;2013-10-18
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