Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribution of oxygen-containing gettering centers in the bulk-Reference-Cited by-同舟云学术

Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribution of oxygen-containing gettering centers in the bulk

Published:2013-11-14 Issue:8 Volume:42 Page:467-476
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Vasilév Yu. B.,Verezub N. A.,Mezhennyi M. V.,Prosolovich V. S.,Prostomolotov A. I.,Reznik V. Ya.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739713080155.pdf

Reference9 articles.

1. Falster, R. and Voronkov, V.V., Rapid thermal processing and control of oxygen precipitation behavior in silicon wafers, Mater. Sci. Forum, 2008, vols. 573–574, pp. 45–60.

2. Milívidskii, M.G., Modern state of technology of semiconductor silicon, Materialovedenie, 2006, no. 11, pp. 15–26.

3. Katsumata, H., Ito, H., Takahashi, H., Ohashi, T., Tobashi, S., and Iwata, K., US Patent 6250914, 2000.

4. Hatta, M., US Patent 6032724, 1997.

5. Kyung, H.-S., Choi, W.-S., and Shin, J.-H., US Patent 5791895, 1996.

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