Estimating the reliability of aluminum metallization of integrated circuits by accelerated electromigration testing at constant temperature-Reference-Cited by-同舟云学术

Estimating the reliability of aluminum metallization of integrated circuits by accelerated electromigration testing at constant temperature

Published:2015-11-14 Issue:7 Volume:44 Page:453-459
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Safonov S. O.,Bespalov V. P.,Golishnikov A. A.,Putrya M. G.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739715070148.pdf

Reference12 articles.

1. Strong, A.V., Wu, E.Y., Vollersten, R.-P., et al., Reliability Wearout Mechanisms in Advanced CMOS Technologies, Reading, MA: IEEE-Wiley, 2009, ch. 7, pp. 565–589.

2. Chen, F., Li, B., Sullivan, D., et al., Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects, J. Vac. Sci. Technol., 2000, Vol. 18, no. 4, pp. 2826–2827.

3. JESD61, Isothermal electromigration test procedure, EIA/JEDEC: April, 1997, p. 15. http://wwwjedecorg. Cited September 19, 2004.

4. JEP119A, A procedure for performing SWEAT (Standard wafer level electromigration accelerated test), JEDEC: August, 2003, p. 24. http://wwwjedecorg. Cited September 19, 2013.

5. JESD202, Method for characterizing the electromigration failure time distribution of interconnects under constant-current and temperature stress, JEDEC: March, 2006, p. 30. http://wwwjedecorg. Cited March 09, 2007.

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