1. John, D., Cressler, H., and Mantooth, A., Extreme Environment Electronics, Boca Raton, FL: CRC, Taylor Francis Group, 2013, p. 978.
2. Udrea, F., Garner, D., Sheng, K., Popescu, A., Lim, H.T., and Milne, V.I., SOI power devices, Electron. Commun. Eng. J., 2000, vol. 12, no. 1, pp. 27–40.
3. Toulon, G., Cortes, I., and Morancho, F., Analysis and optimization of LUDMOS transistors on a 0.18 μm SOI CMOS technology, Int. J. Microelectron. Comput. Sci., 2010, vol. 1, pp. 3–8.
4. The XI10 series is X-Fab’s 1.0-micron modular silicon-on-insulator technology, Process Specification XI10— 1.0 μm SOI CMOS, 2014.
5. Krasnikov, G.Ya., Gornev, E.S., Ignatov, P.V., and Mizginov, D.S., Constructive-technological methods for implementing transistors aimed at high supply voltage, Elektron. Tekh., Ser. 3: Mikroelektron., 2017, no. 4, pp. 12–15.