Application features of the error correction coding in sub-100-nm memory microcircuits for cosmic systems

Author:

Krasnyuk A. A.,Petrov K. A.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Betelin, V.B., Bobkov, S.G., Krasnyuk, A.A., et al., Prospects for Using Submicron CMOS VLSI in Fault-Tolerant Equipment Operating under Exposure to Atmospheric Neutrons, Mikroelektronika, 2009, vol. 38, no. 1, pp. 48–52.

2. Roche P. and Harboe-Sorensen, R., Radiation Evaluation of ST Test Structures in Commercial 130 nm CMOS BULK and SOI, in Commercial 90 nm CMOS BULK, in Commercial 65 nm CMOS BULK and SOI, Final Presentation of ESTEC Contract no. 13528/95/NL/MV, COO-18; Progress Presentation of ESTEC Contract no. 18799/04/NL/AG, COO-3, Mikroelektronika, 2007, pp. 30–31.

3. Ruckerbauer, F.X. and Georgakos, G., Soft Error Rates in 65 nm SRAMs-Analysis of New Phenomena, (Proc. 13th IEEE Int. On-Line Testing Symposium (IOLTS 2007)), Los Alamos, 2007.

4. Hung, L.D., Soft-Error Tolerant Cash Architectures. Department of Information Science and Technology, University of Tokyo, 2006.

5. Riaz Nasser, A Framework for Soft Error Tolerant SRAM Design, Dissertation presented to the Faculty of the Graduate School University of Southern California, 2008, p. 134.

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