Isotope-pure silicon layers grown by MBE-Reference-Cited by-同舟云学术

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Isotope-pure silicon layers grown by MBE

Published:2002-12 Issue:12 Volume:36 Page:1400-1402
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Godisov O. N.,Kaliteevsky A. K.,Safronov A. Yu.,Korolev V. I.,Ber B. Ya.,Davydov V. Yu.,Denisov D. V.,Kaliteevsky M. A.,Kop’ev P. S.,Kovarsky A. P.,Ustinov V. M.,Pohl H. -J.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1529253.pdf

Reference8 articles.

1. T. Ruf, R. W. Henn, M. Asen-Palmer, et al., Solid State Commun. 115, 243 (2000).

2. M. L. Kozhukh, Nucl. Instrum. Methods Phys. Res. A 329, 453 (1993).

3. B. E. Kane, Nature 393, 133 (1998).

4. Y. Nakabayashi, T. Segawa, H. I. Osman, et al., Jpn. J. Appl. Phys. 39, L1133 (2000).

5. H. Bracht, E. E. Haller, and R. Clark-Phelps, Phys. Rev. Lett. 81, 393 (1998).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Isotopic Analysis of Highly Enriched Crystalline 28Si and Initial 28SiF4 by High-Resolution Inductively Coupled Plasma Mass Spectrometry;Journal of Analytical Chemistry;2019-12

2. Isotope-modified silicon layers obtained by plasma enhanced chemical vapor deposition from gaseous silicon tetrafluoride;Technical Physics Letters;2009-10

3. Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials;Journal of Analytical Atomic Spectrometry;2003

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