Annealing of deep boron centers in silicon carbide-Reference-Cited by-同舟云学术

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Annealing of deep boron centers in silicon carbide

Published:2002-02 Issue:2 Volume:36 Page:160-166
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ballandovich V. S.,Mokhov E. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1453430.pdf

Reference20 articles.

1. S. H. Hagen and A. W. C. Kemenade, Phys. Status Solidi A 33, 97 (1976).

2. Yu. A. Vodakov, N. Zhumaev, B. P. Zverev, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 11, 373 (1977) [Sov. Phys. Semicond. 11, 214 (1977)].

3. É. E. Violin and G. F. Kholuyanov, Fiz. Tverd. Tela (Leningrad) 6, 1696 (1964) [Sov. Phys. Solid State 6, 1331 (1964)].

4. H. Kuwabara and S. Yamada, Phys. Status Solidi A 30, 739 (1975).

5. A. I. Veinger, Yu. A. Vodakov, Yu. I. Kozlov, et al., Pis’ma Zh. Tekh. Fiz. 6, 1319 (1980) [Sov. Tech. Phys. Lett. 6, 566 (1980)].

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