Modeling of Structural Defects in Silicon Carbide
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Link
http://link.springer.com/content/pdf/10.1134/S0020168519010151.pdf
Reference19 articles.
1. Lebedev, A.A. and Chelnokov, V.E., Wide-band-gap semiconductors for high-power electronics, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1999, vol. 33, no. 9, pp. 1096–1099.
2. Sobolev, N.A., Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence, Semiconductors, 2010, vol. 44, no. 1, pp. 1–23.
3. Hamasaki, F. and Tsuruta, K., Structures and local electronic states of dislocation loop in 4H-SiC via a linear-scaling tight-binding study, Mater. Trans. JIM, 2011, vol. 52, no. 4, pp. 672–676. https://doi.org/10.2320/matertrans.MBW201024
4. Lebedev, A.A., Deep-level centers in silicon carbide, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1999, vol. 33, no. 2, pp. 129–156.
5. Ballandovich, V.S. and Mokhov, E.N., Annealing of deep boron centers in silicon carbide, Semiconductors, 2002, vol. 36, no. 2, pp. 160–166.
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