Numerical simulation of the temperature dependence of the ionization energy of hydrogen-like impurities in semiconductors: Application to transmutation-doped Ge: Ga-Reference-Cited by-同舟云学术

Numerical simulation of the temperature dependence of the ionization energy of hydrogen-like impurities in semiconductors: Application to transmutation-doped Ge: Ga

Published:2003-11 Issue:11 Volume:45 Page:2053-2059
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Poklonskii N. A.,Vyrko S. A.,Zabrodskii A. G.,Egorov S. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1626737.pdf

Reference39 articles.

1. E. V. Kuchis, Galvanomagnetic Effects and Methods of Their Studies (Radio i Svyaz’, Moscow, 1990).

2. N. A. Poklonskii, A. I. Syaglo, and G. Biskupski, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 415 (1999) [Semiconductors 33, 402 (1999)].

3. N. A. Poklonskii and A. I. Syaglo, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 402 (1999) [Semiconductors 33, 391 (1999)].

4. W. Stiller, Arrhenius Equation and Non-Equilibrium Kinetics (Teubner, Leipzig, 1989; Mir, Moscow, 2000).

5. W. Ebeling, W. D. Kraeft, and D. Kremp, Theory of Bound States and Ionization Equilibrium in Plasmas and Solids (Akademie, Berlin, 1976; Mir, Moscow, 1979).

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