A model of ionization equilibrium and Mott transition in boron doped crystalline diamond
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference37 articles.
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1. Thermal ionization energy of hydrogen-like impurities in semiconductor materials;Journal of the Belarusian State University. Physics;2020-06-04
2. A Phenomenological Model of Mott's Insulator–Metal Phase Transition in 3D and 2D Boron‐Doped Diamond;physica status solidi (b);2020-05-20
3. Drift-diffusion model of hole migration in diamond crystals via states of valence and acceptor bands;Journal of Physics Communications;2018-01-16
4. Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond;Journal of Applied Physics;2016-06-28
5. Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga);Semiconductors;2016-06
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