Structure of oxidized and unoxidized end faces of GaSe layered crystals
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Link
http://link.springer.com/content/pdf/10.1134/S0020168514040062.pdf
Reference13 articles.
1. Kovalyuk, Z.D., Katerynchuk, V.M., Savchuk, A.I., and Lytvyn, O.S., Surface topology of GaSe oxidized crystals, Superlattices Microstruct., 2008, vol. 44, nos. 4–5, p. 416.
2. Balitskii, O.A., Self-organized nanostructures, obtained by oxidation of III–VI compounds, Mater. Lett., 2006, vol. 60, no. 5, p. 594.
3. Katerynchuk, V.N. and Kudrynskyi, Z.R., Optical size effect in In2O3 nanostructured films, Semiconductors, 2013, vol. 47, no. 3, p. 345.
4. Bakhtinov, A.P., Kudrynskyi, Z.R., and Litvin, O.S., Morphology of nanostructures formed on the Van der Waals surface of GaSe layered crystals annealed in sulfur vapor, Phys. Solid State, 2011, vol. 53, no. 10, p. 2154.
5. Bakhtinov, A.P., Vodopyanov, V.N., Netyaga, V.V., et al., Surface morphology and electrical properties of Au/Ni〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions, Semiconductors, 2012, vol. 46, no. 3, p. 342.
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