Oxidation of ultrathin GaSe
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87123, USA
2. Department of Materials and Metallurgical Engineering, New Mexico Tech., Socorro, New Mexico 87801, USA
3. Sandia National Laboratories, Livermore, California 94551, USA
Funder
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4934592
Reference37 articles.
1. Photoconductivity of Gallium Selenide Crystals
2. Photoluminescence frequency up-conversion in GaSe single crystals as studied by confocal microscopy
3. Effective nonlinear GaSe crystal. Optical properties and applications
4. Photoelectric properties of heterostructures based on thermo-oxidated GaSe and InSe crystals
5. GaS and GaSe Ultrathin Layer Transistors
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