Silicon epilayers grown by chemical vapor deposition from high-purity silane-Reference-Cited by-同舟云学术

Silicon epilayers grown by chemical vapor deposition from high-purity silane

Published:2006-08 Issue:8 Volume:42 Page:815-818
ISSN:0020-1685
Container-title:Inorganic Materials
language:en
Short-container-title:Inorg Mater

Author:

Gusev A. V.,Udalov O. F.,Krasil’nikov V. S.,Maksimov G. A.,Kornaukhov A. V.,Kuznetsov O. A.,Uskova E. A.,Shmagin V. B.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Link

http://link.springer.com/content/pdf/10.1134/S0020168506080012.pdf

Reference18 articles.

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2. Grimal’skii, V.V., Kishchenko, Ya.I., and Koshevaya, S.V., Si and GaAs Surface-Oriented PIN Devices: Developments and Prospects, XII Vsesoyuznaya nauchno-tekhnicheskaya konferentsiya po tverdotel’noi elektronike SVCh (XII All-Union Sci. and Technol. Conf. on Microwave Solid-State Electronics), Kiev, 1990, pp. 286–287.

3. Greene, J.E., Gressmann, H.-J., and Schubert, E.F., Delta Doping in Silicon, Solid State Mater. Sci., 2005, vol. 152, no. 6, pp. G448–G451.

4. Ager, J.W., Beeman, J.W., Hansen, W.L., et al., High-Purity, Isotopically Enriched Bulk Silicon, J. Electrochem. Soc., 1993, vol. 18, no. 1, pp. 1–67.

5. Kizilyalli, I.C., Safar, H., Herbsommer, J., et al., Power Transistor Fabricated Using Isotopically Purified Silicon (28Si), IEEE Electron. Device Lett., 2005, vol. 26, no. 6, pp. 404–406.

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