Compensation mechanism for hole conduction in ZnO:N films
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Link
http://link.springer.com/content/pdf/10.1134/S0020168509040116.pdf
Reference49 articles.
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2. Pearton, S.J., Norton, D.P., Ip, K., et al., Recent Progress in Processing and Properties of ZnO, Prog. Mater. Sci., 2005, vol. 50, pp. 293–340.
3. Park, R.M., Troffer, M.B., Rouleau, C.M., et al., p-Type ZnSe by Nitrogen Atom Beam Doping during Molecular Beam Epitaxial Growth, Appl. Phys. Lett., 1990, vol. 57, pp. 2127–2129.
4. Ishibashi, A., II–VI Blue-Green Light Emitters, J. Cryst. Growth, 1996, vol. 159, pp. 555–565.
5. Look, D.C., Reynolds, D.C., Litton, C.W., et al., Characterization of Homoepitaxial p-Type ZnO Grown by Molecular Beam Epitaxy, Appl. Phys. Lett., 2002, vol. 81, pp. 1830–1832.
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