Special features of hopping conduction in p-Hg0.78Cd0.22Te crystals under conditions of dual doping-Reference-Cited by-同舟云学术

Special features of hopping conduction in p-Hg0.78Cd0.22Te crystals under conditions of dual doping

Published:2002-01 Issue:1 Volume:36 Page:26-33
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bogoboyashchii V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1434508.pdf

Reference17 articles.

1. B. I. Shklovskii and A. L. Éfros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer-Verlag, New York, 1984).

2. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford, 1979; Mir, Moscow, 1982), Vol. 1.

3. E. M. Gershenzon, G. N. Gol’tsman, and A. P. Mel’nikov, Pis’ma Zh. Éksp. Teor. Fiz. 14, 281 (1971) [JETP Lett. 14, 185 (1971)].

4. V. V. Bogoboyashchii, S. G. Gasan-zade, and G. A. Shepel’skii, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34(4), 411 (2000) [Semiconductors 34, 398 (2000)].

5. V. V. Bogoboyashchii, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35(1), 34 (2001) [Semiconductors 35, 33 (2001)].

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