High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition

Published:2020-01 Issue:1 Volume:65 Page:122-125
ISSN:1063-7745
Container-title:Crystallography Reports
language:en
Short-container-title:Crystallogr. Rep.

Author:

Ezubchenko I. S.,Chernykh M. Ya.,Mayboroda I. O.,Trun’kin I. N.,Chernykh I. A.,Zanaveskin M. L.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1134/S1063774520010071.pdf

Reference14 articles.

1. T. D. Moustakas and R. Paiella, Rep. Prog. Phys. 80, 106501 (2017).

2. E. A. Jones, F. F. Wang, and D. Costinett, IEEE J. Emerg. Sel. Topics Power Electron. 4 (3), 707 (2016).

3. Y. Cordier, Phys. Status Solidi A 212 (5), 1049 (2015).

4. X. Xu, J. Zhong, H. So, et al., AIP Adv. 6, 115016 (2016).

5. H.-P. Lee, J. Perozek, L. D. Rosario, et al., Sci. Rep. 6, 37588 (2016).

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1. Atomic layer deposition of Al2O3 interlayer for improving AlN growth on silicon substrates;Journal of Vacuum Science & Technology A;2023-08-02

2. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25

3. High-Quality AlN Grown on Si(111) Substrate by Epitaxial Lateral Overgrowth;Crystals;2023-03-05

4. Controlled nucleation time for improving aluminum nitride growth;Materials Science in Semiconductor Processing;2021-10

5. Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111);Materials Science in Semiconductor Processing;2021-06

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