Study of the amorphization of surface silicon layers implanted by low-energy helium ions-Reference-Cited by-同舟云学术

Study of the amorphization of surface silicon layers implanted by low-energy helium ions

Published:2016-03 Issue:2 Volume:61 Page:173-180
ISSN:1063-7745
Container-title:Crystallography Reports
language:en
Short-container-title:Crystallogr. Rep.

Author:

Lomov A. A.,Myakon’kikh A. V.,Oreshko A. P.,Shemukhin A. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1134/S1063774516020127.pdf

Reference20 articles.

1. A. Anders, Handbook of Plasma Immersion Ion Implantation and Deposition (Wiley, New York, 2000).

2. K. Rudenko, S. Averkin, V. Lukichev, et al., Proc. SPIE 6260, 626003-1 (2005).

3. M. Nastasi and J. W. Mayer, Ion Implantation and Synthesis of Materials (Springer, Berlin, 2006).

4. J. M. Chesnokov, A. L. Vasiliev, V. F. Lukichev, et al., Proc. 18th Conf. “Microscopy of Semi-Conducting Materials” (MSMXVIII), Oxford, UK, April 7–11, 2013, Vol. 1, p. 115.

5. S. B. Felch, Z. Fang, B. W. Woo, et al., Surf. Coat. Technol. 156, 22 (2002).

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