Evaluation of compositional intermixing at interfaces in Si(Ge)/Si1−x Gex heteroepitaxial structures grown by molecular beam epitaxy with combined sources of Si and GeH4-Reference-Cited by-同舟云学术

Evaluation of compositional intermixing at interfaces in Si(Ge)/Si1−x Gex heteroepitaxial structures grown by molecular beam epitaxy with combined sources of Si and GeH4

Published:2000-10 Issue:10 Volume:34 Page:1103-1108
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Orlov L. K.,Ivina N. L.,Potapov A. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1317564.pdf

Reference14 articles.

1. D. W. Greve, Mater. Sci. Eng., B 18, 22 (1993).

2. M. G. Mil’vidskii, V. I. Vdovin, L. K. Orlov, et al., in Growth of Crystals, Ed. by E. I. Givargizov and A. M. Melnikova (Consultants Bureau, New York, 1996), Vol. 20, p. 13.

3. L. K. Orlov, V. A. Tolomasov, A. V. Potapov, and V. I. Vdovin, in Proceedings of the 2nd Russia Symposium “Processes of Heat and Mass Transport and Growth of Single Crystals and Thin-Film Structures”, Obninsk, 1998, Ed. by V. P. Ginkin, p. 288.

4. L. K. Orlov, V. A. Tolomasov, A. V. Potapov, and V. I. Vdovin, Izv. Vyssh. Uchebn. Zaved., Ser. Mater. Élektron. Tekh. 2, 30 (1998).

5. V. A. Tolomasov, L. K. Orlov, S. P. Svetlov, et al., Kristallografiya 43, 535 (1998) [Crystallogr. Rep. 43, 493 (1998)].

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