Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures-Reference-Cited by-同舟云学术

Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures

Published:2005-03 Issue:3-6 Volume:36 Page:518-521
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Orlov L.K.,Ivina N.L.,Potapov A.V.,Smyslova T.N.,Vinogradsky L.M.,Horvath Z.J.

Publisher

Elsevier BV

Subject

General Engineering

Reference12 articles.

1. Peculiarities of the growth kinetics of Silicon–Germanium alloy layers from Silane and Germane with an additional heated element in the vacuum chamber;Orlov;Tech. Phys.,2000

2. Multilayer strained Si–SiGe structures: fabrication problems, interface characteristics and physical properties;Orlov;Opto Electron. Rev.,2003

3. Electrical characteristics and the energy band diagram of the isotype n-SiGe/n-Si heterojunction in relaxed structures;Orlov;Phys. Solid State,2004

4. The peculiarities of a non-stationary growth kinetics in GSMBE and their influence on Si/Si1−xGex interfaces abruptness;Orlov;Solid State Phenom.,1999

5. Mechanisms of alloy intermixing in the vicinity of the borderlands of the Si(Ge)/Si1−xGex structures grown by molecular beam epitaxy with combine sources;Orlov;Solid State Phenom.,2002

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1. Kinetics of surface pyrolysis of a silane–germane gas mixture under conditions of epitaxial film deposition of Si1–x Ge x solid solutions;Russian Journal of General Chemistry;2015-12

2. Features of electron transport in relaxed Si/Si1 − x Ge x transistor heterostructures with a high doping level;Semiconductors;2014-07

3. Anomalous electrical properties of Si/Si1 − x Ge x heterostructures with an electron transport channel in Si layers;Physics of the Solid State;2008-02

4. Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface;SPIE Proceedings;2006-05-24