Modification of the subsurface layers of polyimide films upon boron-ion implantation-Reference-Cited by-同舟云学术

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Modification of the subsurface layers of polyimide films upon boron-ion implantation

Published:2015-01 Issue:1 Volume:9 Page:87-91
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Harchenko A. A.,Brinkevich D. I.,Brinkevich S. D.,Lukashevich M. G.,Odzhaev V. B.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451015010103.pdf

Reference27 articles.

1. S. T. Weaver and R. Wells, US Patent No. 8173031 (2012).

2. G. Mao, N. L. D. Somasiri, and N. A. Stacey, US Patent No. 6559245 (2003).

3. T. Kimura, M. Kimura, K. Ohmura, and I. Shibasaki, US Patent No. 4180404 (1979).

4. D. D. Ngo, US Patent No. 5599655 (1997).

5. O. Rohde and A. Schaffner, US Patent No. 4935320 (1990).

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. POLYIMIDE FILMS IMPLANTED BY MANGANESE IONS;HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENCES;2024-04-24

2. Radiation-Induced Alteration of the Reflection Spectra of Diazoquinone–Novolac Photoresist Films by Implantation of Ag+ Ions;High Energy Chemistry;2023-11-30

3. Processes Induced in DLC/Polyimide Structures by Irradiation with 60Co γ-Rays;High Energy Chemistry;2022-09-13

4. Ion Implantation in Diazoquinone–Novolac Photoresist;High Energy Chemistry;2022-07-26

5. Modification of Diazoquinone-Novolac Photoresist Films by the Implantation of Antimony Ions;Russian Microelectronics;2021-01

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