Simulation of the sputtering of Si nanoclusters with diameters of (2–8) nm under bombardment with monatomic and cluster ions using the method of classical molecular dynamics-Reference-Cited by-同舟云学术

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Simulation of the sputtering of Si nanoclusters with diameters of (2–8) nm under bombardment with monatomic and cluster ions using the method of classical molecular dynamics

Published:2013-03 Issue:2 Volume:7 Page:201-210
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Grigor’ev P. Yu.,Zhurkin E. E.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451013020110.pdf

Reference41 articles.

1. H. M. Urbassek, C. Anders, and Y. Rosandi, Nucl. Instrum. Methods Phys. Res. B 269, 947 (2011).

2. T. T. Jarvi and K. Nordlund, Nucl. Instrum. Methods Phys. Res. B 269, 66 (2012).

3. S. Zimmerman and H. M. Urbassek, Int. J. Mass Spectrom. 272, 91 (2008).

4. S. Zimmerman and H. M. Urbassek, Nucl. Instrum. Methods Phys. Res. B 180, 293 (2001).

5. E. E. Zhurkin, J. Surf. Invest. 2, 193 (2008).

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1. Sputtering of silicon membranes with nanoscale thickness;Journal of Applied Physics;2016-06-28

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