Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride-Reference-Cited by-同舟云学术

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

Published:2007-08 Issue:4 Volume:1 Page:380-385
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Govorkov A. V.,Polyakov A. Ya.,Yugova T. G.,Smirnov N. B.,Petrova E. A.,Mezhennyi M. V.,Markov A. V.,Lee I. -H.,Pearton S. J.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

Reference15 articles.

1. M. S. Shur and M. A. Khan, in GaN and Related Materials II, Ed. by S. J. Pearton (Gordon and Breach Sci., Amsterdam, 1999), p. 47.

2. S. Nakamura, in GaN and Related Materials II, Ed. by S. J. Pearton (Gordon and Breach Sci., Amsterdam, 1999), p. 1.

3. G. Popovici and H. Morkoc, in GaN and Related Materials II, Ed. by S. J. Pearton (Gordon and Breach Sci., Amsterdam, 1999), p. 93.

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4. Dislocation structure of the AlGaN/GaN/α-Al2O3 heterostructures epitaxial layers at doping GaN with С and Fe;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2021-01-27