Study of Gallium-Ion-Induced Silicon Amorphization by Matching Experimental and Simulated Electron-Microscopy Images-Reference-Cited by-同舟云学术

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Study of Gallium-Ion-Induced Silicon Amorphization by Matching Experimental and Simulated Electron-Microscopy Images

Published:2020-09 Issue:5 Volume:14 Page:956-960
ISSN:1027-4510
Container-title:Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Rumyantsev A. V.,Prikhodko A. S.,Borgardt N. I.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

https://link.springer.com/content/pdf/10.1134/S1027451020050171.pdf

Reference27 articles.

1. W. Li, X. Zhan, X. Song, et al., Small, 15 (31), 1901820 (2019). https://doi.org/10.1002/smll.201901820

2. L. Bruchhaus, P. Mazarov, L. Bischoff, et al., Appl. Phys. Rev. 4 (1), 011302 (2017). https://doi.org/10.1063/1.4972262

3. N. I. Borgardt, R. L. Volkov, A. V. Rumyantsev, and Yu. A. Chaplygin, Tech. Phys. Lett. 41, 610 (2015). https://doi.org/10.1134/S106378501506019X

4. H. Gnaser, A. Brodyanski, and B. Reuscher, Surf. Interface Anal. 40 (11), 1415 (2008). https://doi.org/10.1002/sia.2915

5. A. V. Rumyantsev, N. I. Borgardt, and R. L. Volkov, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 12, 607 (2018). https://doi.org/10.1134/S1027451018030345

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1. Influence of ion-beam etching by Ar ions with an energy of 200–1000 eV on the roughness and sputtering yield of a single-crystal silicon surface;Applied Optics;2022-03-28

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