Doping effect on the kinetics and mechanism of thermal oxidation of polycrystalline PbSe layers

Author:

Golubchenko N. V.,Moshnikov V. A.,Chesnokova D. B.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Reference19 articles.

1. Neustroev, L.N. and Osipov, V.V., Physical Processes in Photosensitive Polycrystalline Lead Chalcogenide Films, Mikroelektronika, 1988, vol. 17, no. 5, pp. 399–416.

2. Trofimov, V.T., Selivanov, Yu.G., and Chizhevskii, E.G., Photoconductivity of Thin Lead Selenide Epilayers, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1996, vol. 30, no. 4, pp. 755–762.

3. Kovalev, A.N. and Manyakhin, F.I., Polycrystalline Lead Sulfide Layers: Properties and Mechanism of Photoconductivity, Poverkhnost, 1986, no. 2, pp. 117–126.

4. Ravich, Yu.N., Efimova, V.A., and Smirnov, V.A., Metody issledovaniya poluprovodnikov v primenenii k khal–kogenidam svintsa PbTe, PbSe, PbS (Semiconductor Characterization Techniques with Application to PbTe, PbSe, and PbS), Moscow: Nauka, 1968.

5. Zlomanov, V.P. and Novoselova, A.V., Reactions of Lead Selenide with Oxygen, Dokl. Akad. Nauk SSSR, 1961, vol. 247, no. 3, pp. 607–609.

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