X-ray dosimetric characteristics of AgGaS2 single crystals grown by chemical vapor transport
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Link
http://link.springer.com/content/pdf/10.1134/S0020168517050028.pdf
Reference12 articles.
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2. Zhang, Y., Wang, R., Kang, Z., Qu, Li., Jiang, Y., Gao, J-Y., Andreev, Y.M., Lanskii, G.V., Kokh, K.A., Morozov, A.N., Shaiduko, A.V., and Zuev, V.V., AgGaS2- and Aldoped GaSe crystals for IRapplications, Opt. Commun., 2011, vol. 284, pp. 1677–1681.
3. Route, R.H., Felgelson, R.S., Raumakers, R.J., and Choy, M.M., Elimination of optical scattering defects in AgGaS2 and AgGaSe2, J. Cryst. Growth, 1976, vol. 33, no. 2, pp. 239–245.
4. Trotsenko, N.K., Skrebneva, O.V., and Badikov, V.V., RF Patent 1 839 799, 2005.
5. Asadov, M.M. and Mustafaeva, S.N., X-ray dosimetry of an AgGaS2 single crystal, Bull. Russ. Acad. Sci.: Phys., 2015, vol. 79, no. 9, pp. 1113–1117.
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