AgGaS2- and Al-doped GaSe Crystals for IR Applications-Reference-Cited by-同舟云学术

AgGaS2- and Al-doped GaSe Crystals for IR Applications

Published:2011-03 Issue:6 Volume:284 Page:1677-1681
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Zhang Ying-Fei,Wang Rong,Kang Zhi-Hui,Qu Li-Li,Jiang Yun,Gao Jin-Yue,Andreev Yury M.,Lanskii Grigory V.,Kokh Konstantin A.,Morozov Alexander N.,Shaiduko Anna V.,Zuev Vladimir V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Investigation of linear and nonlinear optical properties of GaSxSe1–xcrystals

2. SHG phase matching in GaSe and mixed GaSe1_1-xS_x, x0.412, crystals at room temperature

3. Improved crystal quality and harmonic generation in GaSe doped with indium

4. Modified GaSe crystals for mid-IR applications

5. SHG in doped GaSe:In crystals

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