Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum-Reference-Cited by-同舟云学术

Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum

Published:2000-10 Issue:10 Volume:34 Page:1133-1136
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Lebedev A. A.,Davydov D. V.,Savkina N. S.,Tregubova A. S.,Shcheglov M. P.,Yakimova R.,Syväjärvi M.,Janzén E.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1317570.pdf

Reference13 articles.

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3. Yu. M. Tairov and V. F. Tsvetkov, J. Cryst. Growth 43, 209 (1978).

4. J. W. Palmour, J. A. Edmond, H. S. Kong, and C. H. Carter, Jr., Physica B (Amsterdam) 185, 461 (1993).

5. A. A. Glagovskii, E. V. Granovskii, A. K. Drozdov, et al., in Proceedings of the 2nd All-Union Conference on Physics of Wide-Gap Semiconductors, Leningrad, 1980, p. 226.

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