Effect of laser radiation on the electronic density of states of an 〈insulator gallium arsenide〉 interface-Reference-Cited by-同舟云学术

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Effect of laser radiation on the electronic density of states of an 〈insulator gallium arsenide〉 interface

Published:1997-04 Issue:4 Volume:31 Page:418-422
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vozmilova L. N.,Gaman V. I.,Kalygina V. M.,Panin A. V.,Smirnova T. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187175.pdf

Reference24 articles.

1. B. I. Bednyi, N. V. Baidus’, T. V. Belich, and I. A. Karpovich, Fiz. Tekh. Poluprovodn. 26, 1383 (1992) [Sov. Phys. Semicond. 26, 775 (1992)].

2. B. N. Bessolov, A. F. Ivankov, E. V. Konenkov, and N. V. Lebedev, Pis’ma Zh. Tekh. Fiz. 21, 46 (1995) [sic].

3. S. I. Kirillova, V. E. Primachenko, and V. A. Chernobai, Poverkhnost’, No. 12, 80 (1994).

4. Berkovitz, V. N. Bessolov, T. V. L’vova, and B. V. Tsarenkov, Fiz. Tekh. Poluprovodn. 25, 1406 (1991) [Sov. Phys. Semicond. 25, 847 (1991)].

5. M. S. Carpenter, M. R. Melloch, and T. E. Dangan, Appl. Phys. Lett. 53, 60 (1988).

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