Electrophysical Characteristics of Multilayer Memristive Nanostructures Based on Yttria-Stabilized Zirconia and Tantalum Oxide-Reference-Cited by-同舟云学术

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Electrophysical Characteristics of Multilayer Memristive Nanostructures Based on Yttria-Stabilized Zirconia and Tantalum Oxide

Published:2020-02 Issue:2 Volume:65 Page:284-290
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Tikhov S. V.,Belov A. I.,Korolev D. S.,Antonov I. N.,Sushkov A. A.,Pavlov D. A.,Tetel’baum D. I.,Gorshkov O. N.,Mikhailov A. N.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

https://link.springer.com/content/pdf/10.1134/S1063784220020231.pdf

Reference21 articles.

1. D. Ielmini, Semicond. Sci. Technol. 31, 063002 (2016). https://doi.org/10.1088/0268-1242/31/6/063002

2. Y. Sun, C. Song, J. Yin, X. Chen, Q. Wan, F. Zeng, and F. Pan, ACS Appl. Mater. Interfaces 9, 34064 (2017). https://doi.org/10.1021/acsami.7b09710

3. M. Trapatseli, S. Cortese, A. Serb, A. Khiat, and T. Prodromakis, J. Appl. Phys. 121, 184505 (2017). https://doi.org/10.1063/1.4983006

4. W. Wu, H. Wu, B. Gao, N. Deng, and H. Qian, J. Appl. Phys. 124, 152108 (2018). https://doi.org/10.1063/1.5037896

5. F. Alibart, L. Gao, B. D. Hoskins, and D. B. Strukov, Nanotechnology 23, 075201 (2012). https://doi.org/10.1088/0957-4484/23/7/075201

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