Charge carrier mobility in n-CdxHg1−x Te crystals subjected to dynamic ultrasonic stressing-Reference-Cited by-同舟云学术

Charge carrier mobility in n-CdxHg1−x Te crystals subjected to dynamic ultrasonic stressing

Published:2000-06 Issue:6 Volume:34 Page:644-649
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vlasenko A. I.,Olikh Ya. M.,Savkina R. K.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1188046.pdf

Reference23 articles.

1. K. A. Myslivets and Ya. M. Olikh, Fiz. Tverd. Tela (Leningrad) 32, 2912 (1990) [Sov. Phys. Solid State 32, 1692 (1990)].

2. P. I. Baranskii, A. E. Belyaev, S. M. Komirenko, and N. V. Shevchenko, Fiz. Tverd. Tela (Leningrad) 32, 2159 (1990) [Sov. Phys. Solid State 32, 1257 (1990)].

3. A. V. Lyubchenko and Ya. M. Olikh, Fiz. Tverd. Tela (Leningrad) 37, 2505 (1985) [Sov. Phys. Solid State 27, 1500 (1985)].

4. O. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina, Ukr. Fiz. Zh. 44, 618 (1999).

5. A. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 410 (1999) [Semiconductors 33, 398 (1999)].

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrasound influence on I–V–T characteristics of silicon Schottky barrier structure;Journal of Applied Physics;2015-01-28

2. HgCdMnZnTe: Growth and physical properties;Journal of Alloys and Compounds;2006-10

3. Temperature rise in crystals subjected to ultrasonic influence;Infrared Physics & Technology;2005-06

4. Investigation of the physical properties of multicomponent solid solutions Hg1–x–y–zAxByCzTe;Semiconductor physics, quantum electronics and optoelectronics;2005-05-31

5. Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals;Semiconductor Physics, Quantum Electronics and Optoelectronics;2004-12-16