Effect of uniform compression on photoluminescence spectra of GaAs layers heavily doped with beryllium-Reference-Cited by-同舟云学术

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Effect of uniform compression on photoluminescence spectra of GaAs layers heavily doped with beryllium

Published:2004-03 Issue:3 Volume:38 Page:277-280
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Shamirzaev T. S.,Zhuravlev K. S.,Bak-Misiuk J.,Misiuk A.,Domagala J. Z.,Adamczewska J.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1682326.pdf

Reference12 articles.

1. R. K. Ahrenkiel, R. Ellingson, W. Metzger, et al., Appl. Phys. Lett. 78, 1879 (2001).

2. A. Misiuk, Mater. Phys. Mech. 1, 119 (2002).

3. K. S. Zhuravlev, V. A. Kolosanov, M. Holland, and I. I. Marokhovka, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 1436 (1997) [Semiconductors 31, 1241 (1997)].

4. P. F. Fewster and N. L. Andrew, J. Appl. Crystallogr. 28, 451 (1995).

5. K. S. Zhuravlev, A. V. Kalagin, N. T. Moshegov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 1704 (1996) [Semiconductors 30, 891 (1996)].

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bismuth surfactant effects for GaAsN and beryllium doping of GaAsN and GaInAsN grown by molecular beam epitaxy;Journal of Crystal Growth;2007-06

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