Bismuth surfactant effects for GaAsN and beryllium doping of GaAsN and GaInAsN grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As∕GaNAs quantum-well structures by molecular-beam epitaxy
2. The role of antimony on properties of widely varying GaInNAsSb compositions
3. Bismuth surfactant growth of the dilute nitride GaNxAs1−x
4. Surfactant enhanced growth of GaNAs and InGaNAs using bismuth
5. Effects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxy
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