Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces-Reference-Cited by-同舟云学术

Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces

Published:2000-04 Issue:4 Volume:34 Page:453-461
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Talalaev V. G.,Novikov B. V.,Verbin S. Yu.,Novikov A. B.,Son Thath Dinh,Shchur I. V.,Gobsch G.,Goldhahn R.,Stein N.,Golombek A.,Tsyrlin G. É.,Petrov V. N.,Ustinov V. M.,Zhukov A. E.,Egorov A. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1188007.pdf

Reference63 articles.

1. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Fiz. Tekh. Poluprovodn. 32, 385 (1998) [Semicond. 32, 343 (1998)].

2. G. É. Tsyrlin, V. N. Petrov, M. V. Maksimov, et al., Fiz. Tekh. Poluprovodn. 31, 912 (1997) [Semicond. 31, 777 (1997)].

3. A. F. Tsatsul’nikov, B. V. Volovik, N. N. Ledentsov, et al., Fiz. Tekh. Poluprovodn. 32, 95 (1998) [Semicond. 32, 84 (1998)].

4. P. D. Wang, N. N. Ledentsov, C. M. Sotomayor Torres, et al., Appl. Phys. Lett. 64, 1526 (1994).

5. S. Ruvimov, P. Werner, K. Scheerschmidt, et al., Phys. Rev. B: Condens. Matter 51, 14766 (1995).

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