Recombination radiation of heteroepitaxial structures with InAs quantum dots grown on surface of (311)B GaAs by MBE

Abstract

Abstract Dynamics of recombination radiation is found to be fundamental for control the efficiency of quantum dots (QDs) based structures for different range of optoelectronic device applications. We presented results of an experimental study of recombinational radiation of heteroepitaxial strongly confined InAs QD structures with s which are grown up on a surface of the semi-insulating (311)B GaAs substrate by molecular beam epitaxy. It is shown that for the InAs QDs dots, with characteristic dimensions of 12 x 6 nm2, half-width (FWHM) of the observed recombination line attributed to the main electronic fundamental transition of the exciton at 1.1690 meV at T = 77 K is 41.58 meV. This value of FWHM is substantially less than typical literature values obtained under comparable experimental conditions for heteroepitaxial structures with InAs QDs, grown on vicinal surfaces of (100) GaAs substrate with angle of disorientation 7° relative to direction [001].