Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells-Reference-Cited by-同舟云学术

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Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells

Published:2001-12 Issue:12 Volume:43 Page:2321-2327
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Nelson D. K.,Yacobson M. A.,Kagan V. D.,Gil B.,Grandjean N.,Beaumont B.,Massies J.,Gibart P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1427964.pdf

Reference13 articles.

1. S. Nakamura and G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers (Springer, Berlin, 1997).

2. F. Binet, J. Y. Duboz, E. Rosencher, et al., Phys. Rev. B 54, 8116 (1996).

3. D. K. Nelson, V. D. Kagan, E. V. Kalinina, and M. A. Jacobson, J. Lumin. 72–74, 865 (1997).

4. B. Beaumont, M. Vaille, G. Nataf, et al., MRS Internet J. Nitride Semicond. Res. 3, 20 (1998).

5. M. Tchounkeu, O. Briot, B. Gil, et al., J. Appl. Phys. 80, 5352 (1996).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers;ACS Applied Materials & Interfaces;2021-01-13

2. Electric-field effect of near-band-edge photoluminescence in bulk ZnO;Journal of Materials Science;2010-04-20

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