Wigner crystallization of electrons and holes in amorphous silicon nitride. Antiferromagnetic ordering of localized electrons and holes as a result of a resonance exchange interaction-Reference-Cited by-同舟云学术

Wigner crystallization of electrons and holes in amorphous silicon nitride. Antiferromagnetic ordering of localized electrons and holes as a result of a resonance exchange interaction

Published:1996-10 Issue:7 Volume:64 Page:531-537
ISSN:0021-3640
Container-title:Journal of Experimental and Theoretical Physics Letters
language:en
Short-container-title:Jetp Lett.

Author:

Gritsenko V. A.,Milov A. D.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.567230.pdf

Reference15 articles.

1. V. A. Gritsenko, JETP Lett. 64, 525 (1996).

2. V. A. Gritsenko, Structure and Electronic Structure of Amorphous Insulators in Silicon MIS Structures [in Russian], Novosibirsk, Nauka, 1993.

3. V. A. Gritsenko, Silicon Nitride in Electronics, Materials Science Monograp 34, Elsevier, North Holland, New York, 1988.

4. A. C. Arnett and B. H. Yun, Appl. Phys. Lett. 26, 94 (1975).

5. A. P. Aganin, V. M. Maslovskii, and A. P. Nagin, Mikroélektronika 17, 348 (1988).

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