Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire-Reference-Cited by-同舟云学术

Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire

Published:2006-09 Issue:9 Volume:40 Page:1060-1065
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Klad’ko V. P.,Chornen’kii S. V.,Naumov A. V.,Komarov A. V.,Tacano M.,Sveshnikov Yu. N.,Vitusevich S. A.,Belyaev A. E.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606090132.pdf

Reference14 articles.

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2. V. A. Kochelap, V. V. Mitin, and M. A. Stroscio, Quantum Heterostructures: Microelectronics and Optoelectronics (Cambridge Univ. Press, Cambridge, 1999).

3. L. A. Datsenko, V. F. Machulin, V. P. Klad’ko, and V. B. Molodkin, X-ray Dynamic Scattering by Real Crystals in the Region of Anomalous Dispersion (Akademperiodika, Kiev, 2002) [in Russian].

4. H. Morkoc, Nitride Semiconductors and Devices (Springer, Berlin, 1999).

5. B. A. Danilchenko, S. E. Zelensky, E. Drok, et al., in Proceedings of 6th International Conference on Nitride Semiconductors (Bremen, Germany, 2005); Appl. Phys. Lett. 85, 5421 (2004).

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