Mechanisms of recombination of nonequilibrium charge carriers in epitaxial CdxHg1−x Te (x = 0.20

Mechanisms of recombination of nonequilibrium charge carriers in epitaxial CdxHg1−x Te (x = 0.20–0.23) layers

Published:2007-02 Issue:2 Volume:41 Page:130-135
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ikusov D. G.,Sizov F. F.,Staryi S. V.,Teterkin V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607020029.pdf

Reference16 articles.

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2. A. Rogalski, Infrared Photon Detectors (SPIE Optical Engineering Press, Bellingham, WA, 1995), p. 145.

3. S. M. Ryvkin, Photoelectric Effects in Semiconductors (Fizmatgiz, Moscow, 1963; Consultants Bureau, New York, 1964), p. 39.

4. A. V. Voĭtsekhovskiĭ, Yu. A. Denisov, A. P. Kokhanenko, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 774 (1997) [Semiconductors 31, 655 (1997)].

5. G. Busch and U. Winkler, Bestimmung der Characteristischen Groben eines Halbleiters aus Elektrischen, Optischen und Magnetischen Messungen (Zürich, 1956; Inostrannaya Literatura, Moscow, 1959).

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