Temperature dependence of the carrier lifetime in Cd x Hg1 − x Te narrow-gap solid solutions with consideration for Auger processes-Reference-Cited by-同舟云学术

Temperature dependence of the carrier lifetime in Cd x Hg1 − x Te narrow-gap solid solutions with consideration for Auger processes

Published:2015-04 Issue:4 Volume:49 Page:432-436
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bazhenov N. L.,Mynbaev K. D.,Zegrya G. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782615040065.pdf

Reference17 articles.

1. K. Zeeger, Semiconductor Physics (Springer, Wien, 1973; Mir, Moscow, 1977).

2. D. G. Ikusov, F. F. Sizov, S. V. Stary, and V. V. Teterkin, Semiconductors 41, 130 (2007).

3. J. S. Blakemore, Semiconductor Statistics (Pergamon, Oxford, London, New York, Paris, 1962; Mir, Moscow, 1964).

4. V. N. Abakumov, V. I. Perel’, and I. N. Yassievich, Nonradiative Recombination in Semiconductors (PIYad. Fiz. RAN, St.-Petersburg, 1997; North-Holland, Amsterdam, 1991).

5. B. L. Gel’mont, Sov. Phys. Semicond. 15, 760 (1981).

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