A large enhancement of the maximum drift velocity of electrons in the channel of a field-effect heterotransistor-Reference-Cited by-同舟云学术

A large enhancement of the maximum drift velocity of electrons in the channel of a field-effect heterotransistor

Published:2006-03 Issue:3 Volume:40 Page:357-361
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Požela J. K.,Mokerov V. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606030195.pdf

Reference18 articles.

1. J. Požela, Physics of High-Speed Transistors (Mokslas, Vilnius, 1989; Plenum, New York, 1993).

2. I. Vosylius and I. Levinson, Zh. Éksp. Theor Fiz. 50, 1660 (1966) [Sov. Phys. JETP 23, 1104 (1966)]; Fiz. Tverd. Tela (Leningrad) 10, 1462 (1968) [Sov. Phys. Solid State 10, 1158 (1968)].

3. G. Hill and P. N. Robson, Solid-State Electron. 25, 589 (1982).

4. N. Mori and T. Ando, Phys. Rev. B 40, 6175 (1989).

5. I. Lee, S. M. Goodnick, M. Gulia, et al., Phys. Rev. B 51, 7046 (1995).

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